英德
有道
百度
谷歌
图片
维基
百科
掺杂补偿
doping compensation
- 采用离散变分局域密度泛函（DVLDF）方法及团簇模型研究了IIVI族半导体中的掺杂及补偿问题。
Doping and compensation in II VI semiconductors are studied using discrete variational local density functional (DV LDF) method with cluster model. - 本文分别从自补偿效应，马德隆能以及热力学等角度介绍了氧化锌薄膜的p型掺杂的理论研究。
In this paper, theories of ZnO film p-type doping are introduced in several aspects, including self-compensation effect, madelung energy, and thermodynamics. - 电阻率出现先增大后减小的变化，可能是因为氮掺杂过程中氮和氢离子都进入氧化锌晶格，分别形成浅受主和浅施主并互相补偿的结果。
The phenomena can be attributed to the incorporation of both N and H ions into the ZnO lattice, where shallow acceptors and donors were formed and compensated for each other.
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