溅射工艺 [电子] sputtering technology
- 沿垂直膜面俄歇电子(AES)逐层分析证明,优化溅射工艺制备的薄膜化学成分分布均匀。
The results of AES analyses proved that the optimized composition is uniform along the cross-sections of the film. - 结果表明,溅射工艺因素对薄膜的成份和磁性能有较大的影响。
The results show that the sputtering process factors have large effect on the compositions and magnetic properties. - 利用直流磁控溅射工艺在玻璃衬底上成功制备出了透过率高、电阻率相对低的钛镓共掺杂氧化锌透明导电薄膜(TGZO)。
Transparent conducting Ti-Ga co-doped zinc oxide films(TGZO) with high transparency and relatively low resistivity have been successfully prepared by DC magnetron sputtering at room temperature.