Single wafer silicon epitaxial CVD equipment has very good thickness a nd resistivity uniformity. 使用单片式外延炉生产的硅外延材料具有良好的厚度和电阻率均匀性。
It is shown that the epitaxial layers have flat interface of heterojunctions and good crystal quality. 结果表明外延层具有平坦的异质结界面和良好的晶体特性。
Detailed analyses and descriptions are made on the epitaxial base technique and boron silicate glass self-aligned( BSA) bipolar technique. 对外延基区双极技术,硼硅玻璃自对准双极技术等进行了详细的分析和叙述。