沟道电阻 channel resistance
- JFET区电阻、沟道电阻、积累层电阻和漂移区电阻是导通电阻的四个最主要的组成部分。
JFET resistance, accumulation resistance, channel resistance and drift region resistance is the most important components of on-resistance. - 本发明降低了导电插塞的电阻,并且降低了扩散的离子进入MOS单元的沟道区域的可能性。
By using the invention, the resistance of the conductive plug can be reduced and the possibility of entering a channel area of the MOS unit by diffused ions can be reduced. - 增强的空穴沟道迁移率导致导通电阻的沟道部分减小, 因此,有利地减少了装置的全“导通”电阻。
The enhanced channel mobility of holes leads to a reduction of the channel portion of the on-state resistance, thereby advantageously reducing total 'on' resistance of the device.
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