沟道电导 channel conduction
channel conductance
- 晶体管还进一步包括:栅极结构(6),其用于控制沟道的电导;
The transistor may further include a gate structure (6) for controlling a conductance of the channel; - 由本文模型还推导出了HEMT沟道电导、跨导、栅电容和截止频率等微波参数表达式。
Using this model, the parameters of HEMT such as channel conductance, transconductance, gate capacitance, and cut-off frequency are derived.