英德
有道
百度
谷歌
图片
维基
百科
沟道效应
channelling effect
channel effect
channelling
channel effect
channelling
- 使用的MOS管模型考虑了短沟道效应、栅源电容、栅漏电容和输出电阻。
The MOS model used includes short-channel effects, gate-source capacitance, gate-drain capacitance, and output resistance. - 带电粒子在晶体中的运动会受到沟道效应和阻塞效应的强烈影响。
The motion of energetic charged particles inside a single crystal can be strongly influenced by channeling and blocking effects. - 为了减小小尺寸MOS器件的短沟道效应，采取了改进器件的结构、改变沟道掺杂以及减小栅氧化层厚度等措施。
In order to reduce the short channel effects of short channel MOSFETs, measures like improving devices structure, changing channel doping concentration and reducing gate oxide thickness is proposed.
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