英德
有道
百度
谷歌
图片
维基
百科
沟道区
[电子] channel region
- 在应力作用下，MOS晶体管的源漏电流的大小会随着沟道区所受应力大小而变化。
MOSFET has stress sensitive phenomenon, in which the source current changes with the stress in channel region. - 在该模型中，基于更为合理 的假设而使得用解析方法求得了双扩散沟道区中的电场和电压；
In the model, a more proper assumption result in obtaining both the electric field and the voltage in the double diffused channel region by analytical method; - 传统的EEPROM和快闪存储器两者均利用半导体衬底中定位于沟道区上方且与其绝缘的浮动栅极。
Both the traditional EEPROM and the flash memory utilize a floating gate that is positioned above and insulated from a channel region in a semiconductor substrate.
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